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? semiconductor components industries, llc, 2015 april, 2015 ? rev. 12 1 publication order number: bc846awt1/d bc846, bc847, bc848 general purpose transistors npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sc?70/sot?323 which is designed for low power surface mount applications. features ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo 65 45 30 v collector-base voltage bc846 bc847 bc848 v cbo 80 50 30 v emitter-base voltage bc846 bc847 bc848 v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c p d 200 mw thermal resistance, junction?to?ambient r ja 620 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. www. onsemi.com sc?70/sot?323 case 419 style 3 marking diagram xx = specific device code m = month code = pb?free package (note: microdot may be in either location) xx m collector 3 1 base 2 emitter 1 2 3 see detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet. ordering information
bc846, bc847, bc848 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage bc846 series (i c = 10 ma) bc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ?emitter breakdown voltage bc846 series (i c = 10 a, v eb = 0) bc847 series bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ?base breakdown voltage bc846 series (i c = 10 a) bc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ?base breakdown voltage bc846 series (i e = 1.0 a) bc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain bc846a, bc847a, bc848a (i c = 10 a, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846a, bc847a, bc848a bc846b, bc847b, bc848b bc847c, bc848c h fe ? ? ? 110 200 420 90 150 270 180 290 520 ? ? ? 220 450 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small?signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846, bc847, bc848 www. onsemi.com 3 bc846a, bc847a, bc848a figure 1. dc current gain vs. collector current figure 2. dc current gain vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 0.1 0.01 0.001 0.0001 0 0.02 0.18 figure 3. collector emitter saturation voltage vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.04 0.06 0.08 0.10 0.12 0.14 0.16 figure 5. base emitter voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c
bc846, bc847, bc848 www. onsemi.com 4 bc846a, bc847a, bc848a figure 6. collector saturation region i b , base current (ma) figure 7. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 8. capacitances v r , reverse voltage (volts) 10 figure 9. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, bc847, bc848 www. onsemi.com 5 bc846b figure 10. dc current gain vs. collector current figure 11. dc current gain vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 0.1 0.01 0.001 0.0001 0 0.15 0.30 figure 12. collector emitter saturation voltage vs. collector current figure 13. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 500 0.25 0.20 0.05 0.10 figure 14. base emitter voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 500
bc846, bc847, bc848 www. onsemi.com 6 bc846b figure 15. collector saturation region i b , base current (ma) figure 16. base?emitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be figure 17. capacitance v r , reverse voltage (volts) 40 figure 18. current?gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846, bc847, bc848 www. onsemi.com 7 bc847b, bc848b figure 19. dc current gain vs. collector current figure 20. dc current gain vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 600 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 21. collector emitter saturation voltage vs. collector current figure 22. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0 figure 23. base emitter voltage vs. collector current 0.1 0.01 0.001 0 100 200 600 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 300 400 500 i c , collector current (a)
bc846, bc847, bc848 www. onsemi.com 8 bc847b, bc848b figure 24. collector saturation region i b , base current (ma) figure 25. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 26. capacitances v r , reverse voltage (volts) 10 figure 27. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, bc847, bc848 www. onsemi.com 9 bc847c, bc848c figure 28. dc current gain vs. collector current figure 29. dc current gain vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 30. collector emitter saturation voltage vs. collector current figure 31. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 20 150 c ?55 c 25 c 0.4 0.9 i c /i b = 20 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0 600 700 800 900 figure 32. base emitter voltage vs. collector current i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 h fe , dc current gain 1 v ce = 5 v 150 c ?55 c 25 c 300 400 500 600 700 800 900
bc846, bc847, bc848 www. onsemi.com 10 bc847c, bc848c figure 33. collector saturation region i b , base current (ma) figure 34. base?emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 35. capacitances v r , reverse voltage (volts) 10 figure 36. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, bc847, bc848 www. onsemi.com 11 1 ms thermal limit 1 s figure 37. safe operating area for bc846a, bc846b figure 38. safe operating area for bc847a, bc847b, bc847c v ce , collector emitter voltage (v) v ce , collector emitter voltage (v) 100 10 1 0.001 0.01 0.1 1 100 10 1 0.1 0.001 0.01 0.1 1 figure 39. safe operating area for bc848a, bc848b, bc848c v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) i c , collector current (a) i c , collector current (a) 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms
bc846, bc847, bc848 www. onsemi.com 12 device ordering and specific marking information device specific marking code package shipping ? bc846bwt1g 1b sc?70 (sot?323) (pb?free) 3,000 / tape & reel sbc846bwt1g* bc847awt1g 1e 3,000 / tape & reel sbc847awt1g* bc847bwt1g 1f 3,000 / tape & reel sbc847bwt1g* bc847cwt1g 1g 3,000 / tape & reel sbc847cwt1g* bc847cwt3g 1g 10,000 / tape & reel sbc847cwt3g* bc848bwt1g 1k 3,000 / tape & reel NSVBC848BWT1G* bc848cwt1g 1l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging spe- cifications brochure, brd8011/d. *s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualifi ed and ppap capable.
bc846, bc847, bc848 www. onsemi.com 13 package dimensions sc?70 (sot?323) case 419?04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc846awt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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